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Journal of Electronic Science and Technology  2017, Vol. 15 Issue (4): 364-368    DOI: 10.11989/JEST.1674-862X.70718075
Special Section on Energy, Materials, and Nanotechnology Current Issue | Archive | Adv Search |
Resistive Switching Characteristics of Al2O3/ZnO Bilayer Thin Films for Flexible Memory Applications
Zhi-Peng Wu, Jun Zhu, Li-Bin Fang
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China